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| TO-92 SS8050 Plastic-Encapsulate Transistors TO-92 TRANSISTOR (NPN) FEATURES Power dissipation PCM : 1 W (TA=25) : 2 W (TC=25) 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Junction Temperature Storage Temperature Value 40 25 5 1.5 150 -55-150 Units V V V A 123 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE fT Test conditions MIN 40 25 5 0.1 0.1 0.1 85 40 0.5 1.2 1 100 V V V MHz 400 TYP MAX UNIT V V V A A A IC=100uA, IE=0 IC=0.1mA, IB=0 IE=100A, IC=0 VCB=40V, IE=0 VCE=20V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=10V, IC=50mA,f=30MHZ CLASSIFICATION OF hFE(1) Rank Range B 85-160 C 120-200 D 160-300 D3 300-400 Typical Characteristics SS8050 |
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